Keynote Speaker

Researcher  Zhao Zhang


Researcher Zhao Zhang
Institute of Semiconductors, CAS
Research Interests: design of analog and mixed-signal integrated circuit
Speech Topic: Coming soon

Kai-Da Xu


Researcher Kai-Da Xu
Xi’an Jiaotong University
Research Interests: RF/microwave/mm-wave/THz devices, circuits and antennas, plasmonics
Speech Topic: High-performance millimeter-wave on-chip filters

Title: High-performance millimeter-wave on-chip filters

Speaker: Kai-Da Xu

Affiliation: Xi’an Jiaotong University

Recently, the increasingly severe international situation has caused China to vigorously strengthen the development of the integrated circuit (IC) industry. Moreover, millimeter-waves for next-generation communications have attracted many interests in both industrial and academic communities due to the benefits of wider bandwidth and lower latency. Taking advantage of the multi-layer structures of IC technology, the key problems such as high transmission loss and strong crosstalk from millimeter-wave ICs are expected to be resolved. Filters, as one of the most essential components in the communication system front-ends, are deeply studied by the reporter’s group. This report mainly introduces the reporter’s research works on III-V compound or silicon-based millimeter-wave on-chip filters in recent years.

Ahmed Yusupov

Professor Ahmed Yusupov
Tashkent University of Information Technologies (TUIT)
Research Interests: Growth of semiconductor single crystals and films/Electrical and photoelectric Properties of semiconductors and semiconductor devices/ MOSFET and FinFET simulations
Speech Topic: Degradation effects in nanoscale SOI FinFET

Title: Degradation Effects in Nanoscale Soi Finfet

Authors: A. Yusupov1, A. E. Abdikarimov2, M. M. Khalilloev2, A. E. Atamuratov2

Affiliation: 1Tashkent University of Information Technologies named after Muhammad al-Khwarizmi, Tashkent, Uzbekistan; 2Urgench State University, Urgench, Uzbekistan

The scaling of metal-oxide-semiconductor field effect transistors (MOSFETs) leads to increasing influence of the fluctuation of various parameters on the device characteristics. The short channel effects and the increase in the sensitivity of the drain current to charge trapping in gate oxide or at the interface are some of them.

Vertical MOSFETs produced based on the silicon-on-insulator (SOI) technology (SOI FinFET) and junctionless finned field-effect transistors (SOI JLFinFETs), as representatives of multigate transistors, are presumed to have relatively small short-channel effects (SCEs), in particular, the DIBL effect and a change in the subthreshold swing, at reducing their linear dimensions. However, technological fluctuations of geometric dimensions and deviation from the assumed shapes can be observed in production of nanoscale transistors. This can lead to a change in the expected characteristics of the transistors. In this work, we simulate the effect of thickness Tbox of the back oxide layer and the fin shape on the DIBL effect in an SOI FinFET and SOI JLFinFET. The fin of various shapes was considered: in the form of a triangular prism, a truncated triangular prism, and a parallelepiped, which in the cross section are manifested as a triangle, trapezium, and rectangle.

Decreasing the critical FinFET dimensions up to the nanometer-scale induces the increasing of the defect influence on carrier mobility, subthreshold swing, and threshold voltage. It also stimulates both instability and degradation of the transistor in active mode. Especially amongst these effects, a single charged interface or oxide defect on the drain current can be noticed. These single charged traps can induce instability in the operation of the transistor, generate Random Telegraph Noise (RTN) in the FinFETs and affect both stability and reliability of FinFET-based circuits.

Wanjun Chen


Professor Wanjun Chen
University of Electronic Science and Technology
Research Interests: Novel power semiconductor devices and integration technology
Speech Topic: Field-control Mechanism and Novel Structures of GaN E-mode Power Semiconductor Devices

Title: Field-control Mechanism and Novel Structures of GaN E-mode Power Semiconductor Devices

Authors: Wanjun Chen, Ruize Sun

Affiliation: University of Electronic Science and Technology of China

Owing to their excellent properties, GaN-based power semiconductor devices have gained considerable attention in the next-generation high-power, high-frequency, and high-efficiency power conversion applications. There has been much progress for GaN power device technology in recent years, however, problems and challenges still exist, such as physics models, key device technologies, and device designs.

This paper focuses on the field-control mechanism and model, novel device designs, integration technology, and high voltage blocking technology of GaN E-mode power device, and discusses the future development of GaN-based power devices and ICs.

Yonghong Tan
Professor Yonghong Tan
Shanghai Normal University
Research Interest: noise suppression, fault detection and diagnosis of micro-nano electromechanical systems and micro-optical electromechanical systems
Speech Topic: Advanced control of MEMS Scanning Micro-mirrors

Title: Advanced control of MEMS Scanning Micro-mirrors

Speaker: Yonghong Tan

Affiliation: Shanghai Normal University

MEMS micromirror is a kind of micro/nano chip, which integrates components such as mirror plate, driving mechanism and deflection mechanism, etc. Micromirror chips are often used as actuators to adjust the optical path in precision electro-optical instruments and devices. In fact, each scanning micromirror chip is a complex dynamic system. Based on MEMS electromagnetic scanning micromirrors, this speech will focus on advanced control strategies such as online optimization control and model-independent control, for micromirror angle adjustment and discuss the prospects for future research topics.

Partha Sharathi Mallick
Professor Partha Sharathi Mallick
Vellore Institute of Technology, TN, India
Research Interest: Nanoelectronics/Nanomaterials
Speech Topic: Carbon Nanotube Interconnects in ICs – Prospects and Challenges

Title:Carbon Nanotube Interconnects in ICs – Prospects and Challenges

Speaker: Partha S. Mallick

Affiliation: Vellore Institute of Technology, TN, India

Performance of highly scaled down interconnects in integrated circuits (ICs) is a major cause of concern. As the cross sectional size of interconnects is reduced to a few tens of nano-meters, many reliability problems arise in copper based interconnects, which is used currently in ICs. However, the last decade has seen extensive research in developing carbon nanotube (CNT) based interconnects that have many advantages over existing copper interconnect. Many research groups including our own, have studied the possibilities of using CNTs as interconnects. After the first prototype of MWCNT based interconnects is fabricated and tested at 1GHz in 2008, it became very clear that the time when ICs work on CNT based interconnects is closer than anticipated. The speaker will discuss on some of the present scenarios and future challenges of CNT based interconnects.